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8267 % $ % 49'! %% 2 symbol parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i dm p u l se d d ra i n c urrent p d @t a = 25c power dissipation w linear derating factor mw/c e as si n gl e p u l se a va l anc h e e ner g enc y mj dv/dt peak diode recovery dv/dt t j, t stg junction and storage temperature range symbol parameter typ max units r jl j unct i on-to- d ra i n l ea d CCC 20 r ja junction-to-ambient CCC 50 thermal resistance ratings absolute maximum ratings c/w v/ns c 9.2 5.0 0.02 260 -55 to +150 58 2.5 max 30 20 13 so-8 www.irf.com 1 9/19/06 downloaded from: http:///

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367 ( /%*+ symbol parameter min typ max units v (br)dss drain-to-source breakdown voltage 30 CCC CCC v ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.034 CCC v/c CCC CCC 0.011 CCC CCC 0.018 v gs(th) gate threshold voltage 1.0 CCC 3.0 v g fs forward transconductance 10 CCC CCC s CCC CCC 1.0 CCC CCC 25 gate-to-source forward leakage CCC CCC -100 gate-to-source reverse leakage CCC CCC 100 q g total gate charge CCC 52 79 q gs gate-to-source charge CCC 6.1 9.2 nc q gd gate-to-drain ("miller") charge CCC 16 23 r g gate resistance 1.2 CCC 3.7 t d(on) turn-on delay time CCC 8.6 CCC t r rise time CCC 50 CCC t d(off) turn-off delay time CCC 52 CCC ns t f fall time CCC 46 CCC c iss input capacitance CCC 1800 CCC c oss output capacitance CCC 680 CCC c rss reverse transfer capacitance CCC 240 CCC symbol parameter min. typ. max. units continuous source current (body diode) a pulsed source current ( bod y diode ) v sd diode forward voltage CCC CCC 1.0 v t rr reverse recovery time CCC 74 110 ns q rr reverse recovery charge CCC 200 300 nc electrical characteristics @ tj = 25c (unless otherwise specified) source-drain ratings and characteristics v gs = 10v, see fig. 6 and 9 v dd = 15v i d = 7.3a v gs = -20v v gs = 20v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma t j = 25c, i s = 7.3a, v gs = 0v t j = 25c, i f = 7.3a di/dt = 100a/s showing the integral reverse p-n junction diode. v gs = 10v, i d = 7.3a mosfet symbol v ds = 10v, i d = 3.7a i d = 7.3a v ds = 24v conditions r g = 2.0 ?, see fig. 10 v gs = 0v r g = 6.2 ? v ds = 25v ? = 1.0mhz, see fig. 5 r ds(on) v ds = v gs , i d = 250a v ds = 30v, v gs = 0v v ds = 24v, v gs = 0v, t j = 125c na ? v gs = 4.5v, i d = 3.7a static drain-to-source on-resistance i s i dss drain-to-source leakage current a i gss pf 3.1 CCC CCC i sm CCC CCC 58 downloaded from: http:///

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1 10 100 0.1 1 10 20s pulse width t = 25c a j ds v , drain-to-source voltage (v) 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v d i , drain-to-source current (a) 1 10 100 0.1 1 10 a ds v , drain-to-source voltage (v) d i , drain-to-source current (a) 20s pulse width t = 150c j 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v 1 10 100 3.0 3.5 4.0 4.5 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 10v 20s pulse width ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 7.3a d downloaded from: http:///

4 www.irf.com 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms

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0 400 800 1200 1600 2000 2400 2800 3200 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 1 02 03 04 05 06 0 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a for test circuit see figure 9 i = 7.3a v = 24v v = 15v d dsds 1 10 100 0.4 1.2 2.0 2.8 3.6 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a downloaded from: http:///

www.irf.com 5 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) !"%
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t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 100 200 300 400 500 600 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as o i d top bottom 3.3a 6.0a 7.3a downloaded from: http:///

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0%1% p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - 2 ' ,)'..8 ' ? $
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8 www.irf.com so-8 package outlinedimensions are shown in millimeters (inches) so-8 part marking e1 de y b aa1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070] downloaded from: http:///

www.irf.com 9 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reeldimensions are shown in milimeters (inches) data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/2006 downloaded from: http:///

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